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Off-axis electron holography and microstructure of Ba0.5Sr0.5TiO3 thin film grown on LaAlO3

机译:Ba0.5sr0.5TiO3薄膜的离轴电子全息和微观结构   在LaalO3上生长的薄膜

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摘要

Epitaxial Ba0.5Sr0.5TiO3 thin films grown on the (001) LaAlO3 substrates withthe ferroelectric transition of about 250K have been investigated by TEM andoff-axis electron holography. Cross-sectional TEM observations show that the350nm-thick Ba0.5Sr0.5TiO3 film has a sharp interface with notable misfitdislocations. Off-axis electron holographic measurements reveal that, at lowtemperatures, the ferroelectric polarization results in systematicaccumulations of negative charges on the interface and positive charges on thefilm surface, and, at room temperature, certain charges could only accumulateat the interfacial dislocations and other defective areas.
机译:通过TEM和离轴电子全息图研究了在(001)LaAlO3衬底上生长的具有约250K铁电跃迁的外延Ba0.5Sr0.5TiO3薄膜。透射电镜的横截面观察表明,厚度为350nm的Ba0.5Sr0.5TiO3薄膜具有清晰的界面和明显的失配位错。离轴电子全息测量表明,在低温下,铁电极化会导致界面上的负电荷和薄膜表面上的正电荷系统地积累,并且在室温下,某些电荷只能在界面位错和其他缺陷区域积累。

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